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WINSEMI SEMICONDUCTOR

WFF12N60 Datasheet Preview

WFF12N60 Datasheet

Silicon N-Channel MOSFET

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WFF12N60
Silicon N-Channel MOSFET
Features
12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
Ultra-low Gate Charge(Typical 39nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage ( VISO = 4000V AC )
Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
Electronic lamp ballast.
G
D
S TO220F
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS
EAS
EAR
dv/dt
Gate to Source Voltage
Single Pulsed Avalanche Energy
2)
Repetitive Avalanche Energy
1)
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ, Tstg Junction and Storage Temperature
TL Maximum lead Temperature for soldering purposes
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
(Note1)
(Note
(Note
(Note 3)
Value
600
12*
7.6*
48*
±30
880
25
4.5
51
0.41
-55~150
300
Value
Min Typ Max
- - 2.45
- 0.5 -
- - 62.5
Rev. C Nov.2008
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Units
/W
/W
/W
T03-1




WINSEMI SEMICONDUCTOR

WFF12N60 Datasheet Preview

WFF12N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS IG = ±10 μA, VDS = 0 V
Drain cut−off current
IDSS VDS = 600 V, VGS = 0 V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
V(BR)DSS
ΔBVDSS/
ΔTJ
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to 25
Gate threshold voltage
VGS(th) VDS = 10 V, ID =250 μA
Drain−source ON resistance
RDS(ON) VGS = 10 V, ID =6.0A
Forward Transconductance
gfs VDS = 50 V, ID =6.0A
Input capacitance
Ciss VDS = 25 V,
Reverse transfer capacitance
Crss VGS = 0 V,
Output capacitance
Coss f = 1 MHz
Turn−on Rise time
tr VDD =300 V,
Switchi Turn−on Delay time
ton ID =12 A
ng time
Turn−off Fall time
Turn−off Delay time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
tf
toff
Qg
Qgs
Qgd
RG=9.1 Ω
RD=31 Ω
VDD = 400 V,
VGS = 10 V,
ID =1 A
(Note4,5)
(Note4,5)
WFF12N60
Min Type Max Unit
- - ±100 nA
±30 -
-V
- - 1 μA
600 -
-V
- 0.5 - V/
3 - 4.5 V
- - 0.65 Ω
- 15
S
- 1790 2355
- 175 232 pF
- 23 31
- 133 175
- 80 100
ns
- 100 160
- 233 310
- 39 52
- 8.5 - nC
- 19 -
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
-
-
IDR = 12 A, VGS = 0 V
IDR = 12 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min Type Max Unit
- - 12 A
- - 48 A
- - 1.4 V
- 418 - ns
- 4.85 - μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved.
2/7


Part Number WFF12N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFF12N60 Datasheet PDF






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