WFF12N65 Datasheet | WINSEMI SEMICONDUCTOR

.DataSheet.in F12N6 5 WF WFF N65 Silicon N-Channel MOSFET Features - 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V - Ultra-low Gate Charge(Typical 51.7nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for AC-DCswitching power supplies, DC-DCpower converters, high voltage H-bridge motor drive...