WFF12N60
Overview
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
- 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 39nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage ( VISO = 4000V AC )
- Maximum Junction Temperature Range(150℃)
