Datasheet Summary
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Silicon N-Channel MOSFET
Features
- 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 39nC)
- Fast Switching Capability
- 100%Avalanche Tested
- Isolation Voltage ( VISO = 4000V AC )
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp...
