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WFF12N60 Datasheet Silicon N-channel MOSFET

Manufacturer: WINSEMI SEMICONDUCTOR

Overview: .DataSheet.in WFF12N60 Silicon N-Channel MOSFET.

General Description

This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a Electronic lamp ballast.

Key Features

  • 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 39nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Isolation Voltage ( VISO = 4000V AC ).
  • Maximum Junction Temperature Range(150℃) General.

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