Datasheet Summary
650V Super-Junction Power MOSFET
Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 28nC)
- 100% UIS tested
- RoHS pl iant
- Maximum Junction Temperature Range(150℃)
General Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding...
