WFF12N65S Description
Power MOSFET is fabricated using advanced super junction technology. The resulting device has extremely low on resistance, making it especially suitable for applications which require superior power density and outstanding efficiency. Ratings Symbol Parameter VDSS ID I DM Drain Source Voltage Continuous Drain Current(@Tc=25℃) Drain Current Pulsed 1) VGS Gate to Source Voltage EAS Single Pulse Avalanche Energy 2) IAR...
WFF12N65S Key Features
- Ultra low Rdson
- Ultra low gate charge (typ. Qg = 28nC)
- 100% UIS tested
- RoHS pl iant
- Maximum Junction Temperature Range(150℃)