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WINSEMI SEMICONDUCTOR

WFF12N65 Datasheet Preview

WFF12N65 Datasheet

Silicon N-Channel MOSFET

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WFF12N65 Product Description
Silicon N-Channel MOSFET
Features
■ 12A,650V,RDS(on)(Max0.78Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 39nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ RoHS product
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
AC-DC switching power supplies, DC-DC power converters,high
voltage H-bridge motor drive PWM
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
* Drain current limited by maximum junction temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
650
12*
7.6*
48*
±30
880
12
25
4.5
51
0.41
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Value
Min Typ
Max
- - 2.45
- - 62.5
Units
/W
/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F057-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS




WINSEMI SEMICONDUCTOR

WFF12N65 Datasheet Preview

WFF12N65 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

WFF12N65 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown
voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
VDS = 650 V, VGS = 0 V
IDSS
VDS = 520 V, Tc = 125
Drain−source breakdown
voltage
V(BR)DSS
ID = 250 μA, VGS = 0 V
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID = 6A
Forward Transconductance
gfs VDS = 40 V, ID = 6A
Input capacitance
Ciss VDS = 25 V,
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS = 0 V,
f = 1 MHz
Switching
time
Turn-On Rise time
Turn-on delay time
Turn-On Fall time
Turn-off delay time
tr
Td(on)
tf
Td(off)
VDD =300 V,
ID =12A
RG=25 Ω
(Note4,5)
Total gate charge (gate−source plus
VDD = 480 V,
Qg
gate−drain)
VGS = 10 V,
Gate−source charge
Qgs ID = 12 A
Gate−drain (“miller”) Charge
Qgd
(Note4,5)
Min
-
±30
-
-
650
3
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
-
-
0.71
13
1790
23
175
133
78
104
233
39
8.5
20
Max
±100
Unit
nA
-V
1 μA
10 μA
-V
4.5
0.78
-
2410
31
229
175
102
160
305
V
Ω
S
pF
ns
52
nC
-
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
Reverse recovery time
trr IDR = 12 A, VGS = 0 V,
Reverse recovery charge
Qrr dIDR / dt = 100 A / μs
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Min Type Max Unit
- - 12 A
- - 48 A
- - 1.4 V
- 418 - ns
- 4.85 - μC
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
2/8


Part Number WFF12N65
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFF12N65 Datasheet PDF






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