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WFF12N65 - Silicon N-Channel MOSFET

Description

Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V.
  • Ultra-low Gate Charge(Typical 51.7nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFF12N65

Datasheet Details

Part number WFF12N65
Manufacturer WINSEMI SEMICONDUCTOR
File Size 209.15 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF12N65 Datasheet
Additional preview pages of the WFF12N65 datasheet.

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Full PDF Text Transcription

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www.DataSheet.in F12N6 5 WF WFF N65 Silicon N-Channel MOSFET Features ■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V ■ Ultra-low Gate Charge(Typical 51.7nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junction Temperature Range(150℃) General Description Thi s Pow e r MO SF ET is pr od u ced usi ng Wi n sem i ’s adv an ce d planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
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