Datasheet Details
| Part number | WFF13N50 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 215.54 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFF13N50_WINSEMISEMICONDUCTOR.pdf |
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Overview: www.DataSheet.in N50 WFF13 F13N50 Silicon N-Channel MOSFET.
| Part number | WFF13N50 |
|---|---|
| Manufacturer | WINSEMI SEMICONDUCTOR |
| File Size | 215.54 KB |
| Description | Silicon N-Channel MOSFET |
| Datasheet | WFF13N50_WINSEMISEMICONDUCTOR.pdf |
|
|
|
This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv /dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Channel Temperature (Note2) (Note1) (Note3) (Note1) Parameter Value 500 13 8 52 ±30 845 5 3.5 48 0.39 -55~150 300 Units V A A A V mJ mJ V/ ns W W/℃ ℃ ℃ Thermal Characteristics Symbol RQJC RQCS RQJA Parameter Thermal Resistance , Junction -to -Case Thermal Resistance , Case-to-Sink Thermal Resistance , Junction-to -Ambient Value Min - Typ 0.5 - Max 2.58 62.5 Units ℃/W ℃/W ℃/W Rev.A Oct.2010 Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
www.DataSheet.in N50 WFF13 F13N50 Electrical Characteristics(Tc=25℃) Characteristics Gate leakage current Gate-source breakdown voltage Symbol IGSS V(BR)GSS Test Condition VGS=±30V,VDS=0V IG=±10 µA,VDS=0V VDS=500V,VGS=0V Min ±30 - Type - Max ±100 1 10 Unit nA V µA µA V V/℃ V Ω S Drain cut -off current IDSS VDS=400V,TC=125℃ Drain -source breakdown voltage Breakdown voltage Temperature Coefficient Gate threshold voltage Drain -source ON resistance Forward Transcondu
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