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WFF13N50 Datasheet Preview

WFF13N50 Datasheet

Silicon N-Channel MOSFET

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WFF13N50 Product Description
Silicon N-Channel MOSFET
Features
13A,500V, RDS(on)(Max0.46Ω)@VGS=10V
Ultra-low Gate charge(Typical 37nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,DMOS technology.This latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for high efficiency
switch model power supplies, power factor correction and half bridge and
full bridge resonant topology line a electronic lamp ballast.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
IAR Avalanche Current
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
note 1
(Note1)
(Note3)
Value
500
13*
8*
52*
±30
845
13
5
4.5
50
0.4
-55~150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ ns
W
W/
Value
Min Typ Max
- - 2.5
- - 62.5
Units
/W
/W
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
WINSEM I M ICROELECTRONICS
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
WINSEM I M ICROELECTRONICS
WT-F059-Rev.A1 Jan.2014
WINSEM I M ICROELECTRONICS
1010




WINSEMI SEMICONDUCTOR

WFF13N50 Datasheet Preview

WFF13N50 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

WFF13N50 Product Description
Silicon N-Channel MOSFET
Electrical Characteristics(Tc=25)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS=±30V,VDS=0V
Gate-source breakdown voltage
V(BR)GSS
IG=±10 µA,VDS=0V
Drain cut -off current
VDS=500V,VGS=0V
IDSS
VDS=400V,TC=125
Drain -source breakdown voltage
V(BR)DSS
ID=250 µA,VGS=0V
Breakdown voltage Temperature
Coefficient
BVDSS/TJ ID=250µA,Referenced to 25
Gate threshold voltage
VGS(th)
VDS=10V,ID=250 µA
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=6.5A
Forward Transconductance
gfs VDS=40V,ID=6.5A
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
Turn-On rise time
Switching time
Turn-On delay time
Turn-Off Fall time
Turn-Off delay time
tr
td(on)
tf
td(off)
VDD=250V,
ID=13A
RG=25Ω
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qg
Qgs
Qgd
VDD=400V,
VGS=10V,
ID=13A
(Note4,5)
Min
-
±30
-
500
-
3
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
0.6
-
0.37
15
1560
25
210
160
90
60
150
37
10.9
17.2
Max
±100
-
1
10
-
-
4.5
0.46
-
2090
30
260
270
180
140
260
50
-
-
Unit
nA
V
µA
µA
V
V/
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage(diode)
VDSF
IDR=13A,VGS=0V
Reverse recovery time
Reverse recovery charge
trr IDR=13A,VGS=0V,
Qrr dIDR / dt =100 A / µs
Min Type Max Unit
- - 13 A
- - 52 A
- - 1.4 V
- 410 - ns
- 4.5 - µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=9.0mH IAS=13A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤13A,di/dt≤200A/us,VDD<BVDSS,Starting TJ=25
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
www.winsemi.com Tel : +86-755-8250 6288 Fax : +86-755-8250 6299
WIN SEM I M ICROELECTRON ICS
WIN SEM I M ICROELECTRON ICS
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Part Number WFF13N50
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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