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WFF13N50 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies,

Features

  • 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

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Datasheet preview – WFF13N50

Datasheet Details

Part number WFF13N50
Manufacturer WINSEMI SEMICONDUCTOR
File Size 215.54 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFF13N50 Datasheet
Additional preview pages of the WFF13N50 datasheet.

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Full PDF Text Transcription

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www.DataSheet.in N50 WFF13 F13N50 Silicon N-Channel MOSFET Features � � � � � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,DMOS technology.This latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .This devices is specially wellsuited for high efficiency switch model power supplies, power factor correction and half bridge and full bridge resonant topology line a electronic lamp ballast.
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