Datasheet4U Logo Datasheet4U.com

WFP10N65 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Features

  • 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General.

📥 Download Datasheet

Datasheet preview – WFP10N65

Datasheet Details

Part number WFP10N65
Manufacturer WINSEMI SEMICONDUCTOR
File Size 902.65 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP10N65 Datasheet
Additional preview pages of the WFP10N65 datasheet.
Other Datasheets by WINSEMI SEMICONDUCTOR

Full PDF Text Transcription

Click to expand full text
www.DataSheet.in P10N6 5 WF WFP 10N65 Silicon N-Channel MOSFET Features � � � � � � 10A,650V,RDS(on)(Max 1Ω)@VGS=10V Ultra-low Gate Charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Improved dv/dt capability General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,VDMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for AC-DC switching power supplies,DC-DC power converters,high voltage h-bridge motor drive PWM.
Published: |