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Features
� 10A,650V,RDS(on)(Max 1Ω)@VGS=10V
� Ultra-low Gate Charge(Typical 43nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Isolation Voltage(VISO=4000V AC)
� Improved dv/dt capability
WFP10N65
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced planar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a high rugged avalanche
characteristics. This devices is specially well suited for AC-DC switching
power supplies,DC-DC power converters,high voltage h-bridge motor
drive PWM.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Continuous Drain Current(@Tc=100℃)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
650
10*
6.0*
40*
±30
748
15.6
4.5
156
1.25
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/℃
℃
℃
Value
Units
Min Typ Max
- - 0.80 ℃/W
- - 62.5 ℃/W
Rev.A Sep.2010
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