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WINSEMI SEMICONDUCTOR

WFP12N60 Datasheet Preview

WFP12N60 Datasheet

Silicon N-Channel MOSFET

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WFP12N60
Silicon N-Channel MOSFET
Features
■ 12A, 600V,RDS(on)(Max 0.65Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 43nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
(Note1)
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Maximum lead Temperature for soldering purposes
Value
600
12
7.6
48
±30
880
25
4.5
250
2.0
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 0.50
- 0.5
-
- - 62.5
Units
/W
/W
/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.




WINSEMI SEMICONDUCTOR

WFP12N60 Datasheet Preview

WFP12N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
IDSS VDS = 500 V, VGS = 0 V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn−on time
Switching time Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
V(BR)DSS
ΔBVDSS/
ΔTJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to
25
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 6.0A
VDS = 50 V, ID = 6.0A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =250 V,
ID =12A
RG=9.1Ω
RD=31Ω
(Note4,5)
VDD = 400 V,
VGS = 10 V,
ID = 1 A
(Note4,5)
Min
-
±30
-
600
-
3
-
-
-
-
-
-
-
-
-
-
-
-
WFP12N60
Type
-
-
Max
±100
-
-1
--
Unit
nA
V
μA
V
0.5 - V/
-
0.37
15
1580
180
20
25
100
130
4.5
0.65
-
2055
235
25
60
210
270
V
Ω
S
pF
ns
100 210
43
7.5
18.5
56
-
-
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol Test Condition Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = 12 A, VGS = 0 V
-
Reverse recovery time
trr IDR = 12 A, VGS = 0 V,
-
Reverse recovery charge
Qrr dIDR / dt = 100 A / μs
-
Type
-
-
-
418
4.85
Max
12
48
1.4
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,IAS=12A,VDD=50V,RG=25Ω,Starting TJ=25
3.ISD≤12A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7


Part Number WFP12N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFP12N60 Datasheet PDF






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