WFP2N60
Features
- 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V
- Ultra-low Gate Charge(Typical 15n C)
- Fast Switching Capability
- 100%Avalanche Tested
- Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power supply.
TO220
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TJ, Tstg TL Drain Source Voltage Continuous Drain Current(@Tc=25℃) Continuous Drain Current(@Tc=100℃) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@Tc=25℃) Derating Factor above 25℃ Junction and Storage Temperature Maximum lead Temperature for soldering purposes (Note 2) (Note 1) (Note 3) (Note1)
Paramet...
