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WINSEMI SEMICONDUCTOR

WFP2N60 Datasheet Preview

WFP2N60 Datasheet

Silicon N-Channel MOSFET

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WFP2N60
Silicon N-Channel MOSFET
Features
2A,650V(Type.), RDS(on)(Max 5)@VGS=10V
Ultra-low Gate Charge(Typical 15nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150)
General Description
This Power MOSFET is produced using Winsemi’s advanced planar
stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch mode power supply.
G
D
S
TO220
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25)
Derating Factor above 25
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
650
2.0
1.3
6
±30
120
5.4
5.5
54
0.43
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 2.3
0.5 -
-
- - 62.5
Units
/W
/W
/W
Rev. D Nov.2009
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
T02-2
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WINSEMI SEMICONDUCTOR

WFP2N60 Datasheet Preview

WFP2N60 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

WFP2N60
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS VGS = ±30 V, VDS = 0 V
Gatesource breakdown voltage V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
VDS = 480 V, Tc = 125°C
Drainsource breakdown voltage V(BR)DSS
ID = 250 μA, VGS = 0 V
Break Voltage Temperature
Coefficient
ΔBVDSS/
ΔTJ
ID=250μA, Referenced to 25
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
Drainsource ON resistance
RDS(ON)
VGS = 10 V, ID =1A
Forward Transconductance
gfs
VDS = 50 V, ID =1A
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
Switching time
Rise time
Turnon time
Fall time
Turnoff time
tr
ton
tf
toff
VDD =300 V,
ID = 2 A
RG=25
(Note4,5)
Total gate charge (gatesource
plus gatedrain)
Gatesource charge
Gatedrain (“miller”) Charge
Qg
Qgs
Qgd
VDD = 320 V,
VGS = 10 V,
ID = 2 A
(Note4,5)
Min
-
±30
-
-
600
-
2
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
650
0.65
-
4.2
2.05
380
35
7.6
15
50
40
40
15
1.7
7.2
Max
±100
-
10
100
-
Unit
nA
V
μA
μA
V
- V/
4V
5
-S
490
49 pF
9.9
42
108
ns
89
89
19
nC
-
-
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
IDR
IDRP
VDSF
trr
Qrr
-
-
IDR = 2 A, VGS = 0 V
IDR = 2 A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min Type Max Unit
- - 2A
- - 6A
- - 1.4 V
- 200 - ns
- 1.3 - μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=0.5mH,IAS=2.0A,VDD=50V,RG=0,Starting TJ=25
3.ISD2.0A,di/dt200A/us, VDD<BVDSS,STARTING TJ=25
4.Pulse Test: Pulse Width300us,Duty Cycle2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/7
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Part Number WFP2N60
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFP2N60 Datasheet PDF






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