WFP2N60B Datasheet | WINSEMI SEMICONDUCTOR

.DataSheet.in B WFP2N60 FP2N60B Silicon N-Channel MOSFET Features - 2A,600V, RDS(on)(Max 4.7Ω)@VGS=10V - Ultra-low Gate Charge(Typical 9.0nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power...