!
S
TO‐220
G‐Gate,D‐Drain,S‐Sourse
Absolute Maximum Ratings Tc=25℃ unless other wise noted
Symbol VDSS
ID
VGS EAS IAR PD TJ,TSTG
TL
Parameter
Drain-Sourse Voltage
Drain Curren.
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HIGH VOLTAGE N-Channel MOSFET
WFP2N60
600V N-Channel MOSFET
Features
□ Low Intrinsic Capacitances □ Excellent Switching Characteristics □ Extended Safe Operating Area □ Unrivalled Gate Charge :Qg= 8.5nC (Typ.