WFP2N60 Datasheet | WINSEMI SEMICONDUCTOR

Silicon N-Channel MOSFET Features - 2A,650V(Type.), RDS(on)(Max 5Ω)@VGS=10V - Ultra-low Gate Charge(Typical 15nC) - Fast Switching Capability - 100%Avalanche Tested - Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi’s advanced planar stripe, VDMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch mode power...