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WFP650 Datasheet Preview

WFP650 Datasheet

Silicon N-Channel MOSFET

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WFP650
Features
28A, 200v, RDS(on)=0.085Ω @VGS=10V
Low gate charge (typical 95 nC)
Low crss (typical 75 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Silicon N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary ,
planar,DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance , provide superior switching
Performance , and with stand high energy pulse in the
avalanche and commutation mode.These devices are well
suited for high efficiency switching DC/DC converters,
Switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Absolute Maximum Ratings
Symbol Parameter
VDSS
ID
Drain-Source Voltage
Drain Current -Continuous(TC=25)
-Continuous(TC=100)
IDM Drain Current -Pulsed
(Note 1)
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ,TSTG
TL
Gate-Source Voltage
Single Pulse Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation(TC=25)
-Derate above25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8"from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance,Junction-to-Case
Thermal Resistance,Case-to-Sink
Thermal Resistance,Junction-Ambient
Min
-
-
-
Value
200
28
17.7
112
±30
600
28
15.6
5.5
156
1.25
-55~150
300
Value
Typ
-
0.5
-
Max
0.8
-
62.5
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/
Units
/W
/W
/W
Rev.A Jul.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.




WINSEMI SEMICONDUCTOR

WFP650 Datasheet Preview

WFP650 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

www.DataSheet.in
WFP650
Electrical Characteristics
Characteristics
Drain-source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current ,Forward
Gate-Body Leakage Current ,Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
TC=25
Symbol
BVDSS
BVDSS/
TJ
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
Td(on)
tr
Td(off)
tf
Qg
Qgs
Qgd
Test Conditions
VGS=0V,ID=250µA
ID=250µA,Reference
d to 25
VDS=200V,VGS=0V
VDS=160V,TC=125
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
VDS=VGS,ID=250µA
VGS=10V,ID=14A
VDS=40V,ID=14A
(Note4)
VDS=25V,VGS=0V,
f=1.0MHz
VDD=100V,ID=32A,RG
=25Ω
(Note4,5)
VDS=160V,ID=32A,VG
S=10V
(Note4,5)
Min
200
--
--
--
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
--
Typ
--
0.2
--
--
--
--
--
0.071
25
2600
330
75
30
240
295
195
95
13
43
Max
--
--
10
100
100
-100
4.0
0.085
Units
V
V/
µA
µA
nA
nA
V
--
3400
430
100
70
490
600
400
123
--
--
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Source-Drain Ratings and Characteristlcs
Characteristics
Symbol
Test
Conditions
Maximum Continuous Drain-Source Diode
Forward Current
IS
--
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
--
Drain-Source Diode Forward Voltage VSD VGS=0V,IS=28A
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0V,IS=32A,
Qrr
dIF/dt=100A/µs
(Note4)
Min Typ Max Units
-- --
28
A
-- -- 112
-- -- 1.5
-- 220
--
-- 1.89
--
A
V
ns
µC
Notes:
1. Repetitive Rating:Pulse Width limited by maximum junction temperature
2. L=1.15mH,IAS=28A,VDD=50V,RG=25Ω,Starting TJ=25
3. ISD≤32A,di/dt≤300A/µs,VDD≤BVDSS,Starting TJ=25
4. Pulse Test:Pulse width≤300µs,Duty cycle≤2%
5. Essentially independent of operating temperature
Steady,all for your advance
2/7


Part Number WFP650
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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