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WINSEMI SEMICONDUCTOR

WFW18N50 Datasheet Preview

WFW18N50 Datasheet

Silicon N-Channel MOSFET

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Features
„ 18A,500V,RDS(on)(Max0.265)@VGS=10V
„ Ultra-low Gate charge(Typical 42nC)
„ Fast Switching Capability
„ 100%Avalanche Tested
„ Maximum Junction Temperature Range(150℃)
WFW18N50
Silicon N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Winsemi’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
PD Total Power Dissipation(@Tc=25)
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note2)
(Note1)
(Note3)
Value
500
18
12.7
80
±30
330
27.7
4.5
280
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Case-to-Sink
Thermal Resistance , Junction-to -Ambient
Value
Min Typ Max
- - 0.45
- 0.24 -
- - 40
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
Units
/W
/W
/W
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WINSEMI SEMICONDUCTOR

WFW18N50 Datasheet Preview

WFW18N50 Datasheet

Silicon N-Channel MOSFET

No Preview Available !

Electrical Characteristics(Tc=25)
WFW18N50
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Symbol
IGSS
V(BR)GSS
IDSS
V(BR)DSS
BVDSS/
TJ
VGS(th)
RDS(ON)
gfs
Ciss
Crss
Coss
tr
ton
tf
toff
Qg
Qgs
Qgd
Test Condition
VGS=±25V,VDS=0V
IG=±10 µA,VDS=0V
VDS=500V,VGS=0V
ID=10 mA,VGS=0V
ID=250µA,Referenced
to 25
VDS=10V,ID=250µA
VGS=10V,ID=9A
VDS=40V,ID=9A
VDS=25V,
VGS=0V,
f=1MHz
VDD=250V,
ID=18A
RG=25
(Note4,5)
VDD=400V,
VGS=10V,
ID=18A
(Note4,5)
Min
-
±30
-
500
-
3
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
0.5
-
0.27
16
2530
11
300
40
150
95
110
42
12
14
Max
±10
-
100
-
-
5
0.40
-
3290
14.3
390
90
310
200
230
55
-
-
Unit
nA
V
µA
V
V/
V
S
pF
ns
nC
Source-Drain Ratings and Characteristics(Ta=25)
Characteristics
Symbol Test Condition
Min
Continuous drain reverse current
Pulse drain reverse current
IDR
IDRP
--
--
Forward voltage(diode)
VDSF
IDR=18A,VGS=0V
-
Reverse recovery time
Reverse recovery charge
trr IDR=18A,VGS=0V,
Qrr dIDR / dt =100 A / µs
-
-
Type
-
-
-
1.6
20
Max
18
80
-1.9
-
-
Unit
A
A
V
ns
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=1.83mH IAS=18A,VDD=50V,RG=25,Starting TJ=25
3.ISD18A,di/dt200A/us,VDD<BVDSS,STARTING TJ=25
4.Pulse Test:Pulse Width300us,Duty Cycle2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, all for your advance
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Part Number WFW18N50
Description Silicon N-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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WFW18N50 Datasheet PDF






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