WFY3P02 - 20V P-Channel MOSFET

WINSEMI SEMICONDUCTOR

Datasheet Details

Part number	WFY3P02
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	268.57 KB
Description	20V P-Channel MOSFET
Datasheet	WFY3P02 Datasheet

General Description

This Power MOSFET is produced using Winsemi’s advanced MOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Marking: H03F Absolute Maximum Ratings Symbol VDSS ID Drain Source Voltage Continuous Drain Current(Note 1) Steady State t≤10s Steady State t≤10s Steady State t=10s C=100pF,RS = 1500Ω Tc=25℃ Tc=85℃ Tc=25℃ Tc=25℃ Tc=25℃ Tc=85℃ Tc=25℃ Parameter Value -20 −2.8 -1.7 -3.2 0.80 1.25 -1.8 -1.3 0.42 -7.5 ±8 225 -55~150 260 Units V A PD ID PD IDM VGS ESD TJ, Tstg TL Total Power Dissipation(Note 1) Continuous Drain Current(Note 2) Total Power Dissipation(Note 2) Drain Current Pulsed Gate to Source Voltage ESD Capability (Note 3) Junction and Storage Temperature W A W A V V ℃ ℃ Maximum lead Temperature for soldering purposes Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.

Overview

WFY3P02 −20V, P−Channel MOSFET ,.

Key Features

-3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V.
1.8 V Rated for Low Voltage Gate Drive.
SOT-23 Surface Mount for Small Footprint.
Single Pulse Avalanche Energy Rated General.

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