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WINSEMI SEMICONDUCTOR

WFY3P02 Datasheet Preview

WFY3P02 Datasheet

20V P-Channel MOSFET

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WFY3P02
20V, PChannel MOSFET
,
Features
-3.2A, -20V, RDS(on)(Max 130m)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
SOT-23 Surface Mount for Small Footprint
Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
D
G
S
SOT-23
Marking: H03F
Absolute Maximum Ratings
Symbol
VDSS
ID
PD
ID
PD
IDM
VGS
ESD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(Note 1)
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Gate to Source Voltage
Steady State
t10s
Steady State
t10s
Steady State
t=10s
Tc=25
Tc=85
Tc=25
Tc=25
Tc=25
Tc=85
Tc=25
ESD Capability (Note 3)
C=100pF,RS = 1500
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Value
-20
2.8
-1.7
-3.2
0.80
1.25
-1.8
-1.3
0.42
-7.5
±8
225
-55~150
260
Units
V
A
W
A
W
A
V
V
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
Parameter
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min Typ Max
- - 170
110
300
Units
/W
/W
/W
Note 1: Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surfacemounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010-H03F
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P03-3
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WINSEMI SEMICONDUCTOR

WFY3P02 Datasheet Preview

WFY3P02 Datasheet

20V P-Channel MOSFET

No Preview Available !

Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current(Note 4)
IGSS VGS = ±8 V, VDS = 0 V
Drain cutoff current(Note 4)
IDSS VDS = -16 V, VGS = 0 V
Drainsource breakdown voltage
V(BR)DSS ID = -250 μA, VGS = 0 V
Gate threshold voltage
VGS(th)
VDS = VDS, ID =-250 μA
Drainsource ON resistance
RDS(ON)
VGS = 4.5 V, ID = 2.8 A
VGS = 2.5 V, ID = 2.0 A
Forward Transconductance
gfs VDS = 5.0 V, ID = 2.8 A
Input capacitance
Ciss VDS = -6 V,
Reverse transfer capacitance
Crss VGS = 0 V,
Output capacitance
Coss f = 1 MHz
Switching
time
(Note 5)
Turn-on Delay time
Turnon Rise time
Turn-off Delay time
Turnoff Fall time
td(on)
tr
td(off)
tf
VGS = 4.5 V,
VDS = 6 V,
ID = 1.0 A,
RG = 6.0 , RL=6,
Total gate charge
Qg VGS = 4.5 V,
Gatesource charge
Qgs
VDS = 10 V,
Gatedrain (“miller”) Charge
Qgd ID = 2.8 A
WFY3P02
Min
-
-
-20
-0.40
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
95
122
6.5
477
80
127
5
19
95
65
5.4
0.8
1.1
Max
±100
-1.0
-
-1.5
130
150
-
-
-
-
-
-
-
8.5
-
-
Unit
nA
μA
V
V
m
S
pF
ns
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = -1.6A, VGS = 0 V
-
Type
-
-
-0.82
Max
-1.6
-7.5
-1.2
Unit
A
A
V
Note 4: Pulse Test: Pulse Width 300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/5
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Part Number WFY3P02
Description 20V P-Channel MOSFET
Maker WINSEMI SEMICONDUCTOR
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