WFY4101 - Trench Power MOSFET

WINSEMI SEMICONDUCTOR

Datasheet Details

Part number	WFY4101
Manufacturer	WINSEMI SEMICONDUCTOR
File Size	352.75 KB
Description	Trench Power MOSFET
Datasheet	WFY4101 Datasheet

General Description

This Power MOSFET is produced using Winsemi’s advanced MOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

This devices is specially well suited for Load/Power Management for Portables and Computing, Charging Circuits and Battery Protection G S D SOT-23 Absolute Maximum Ratings Symbol VDSS ID Drain Source Voltage Continuous Drain Current(Note 1) Steady State t≤10s Steady State t≤10s Steady State t=10s Tc=25℃ Tc=85℃ Tc=25℃ Tc=25℃ Tc=25℃ Tc=85℃ Tc=25℃ Parameter Value -20 −2.4 -1.7 -3.2 0.73 1.25 -1.8 -1.3 0.42 -7.5 ±8 C=100pF,R S = 1500Ω 225 -55~150 260 Units V A PD ID PD IDM VGS ESD TJ, Tstg TL Total Power Dissipation(Note 1) Continuous Drain Current(Note 2) Total Power Dissipation(Note 2) Drain Current Pulsed Gate to Source Voltage ESD Capability (Note 3) Junction and Storage Temperature W A W A V V ℃ ℃ Maximum lead Temperature for soldering purposes Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously.

Overview

www.DataSheet.in WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT.

Key Features

es.
-3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V.
1.8 V Rated for Low Voltage Gate Drive.
SOT-23 Surface Mount for Small Footprint.
Single Pulse Avalanche Energy Rated General.

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