WFY3P02 Description
This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and puting, Charging Circuits and Battery Protection G S D SOT-23 Marking:.
WFY3P02 Key Features
- 3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V
- 1.8 V Rated for Low Voltage Gate Drive
- SOT-23 Surface Mount for Small Footprint
- Single Pulse Avalanche Energy Rated