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WFY3P02 - 20V P-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced MOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V.
  • 1.8 V Rated for Low Voltage Gate Drive.
  • SOT-23 Surface Mount for Small Footprint.
  • Single Pulse Avalanche Energy Rated General.

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Datasheet preview – WFY3P02

Datasheet Details

Part number WFY3P02
Manufacturer WINSEMI SEMICONDUCTOR
File Size 268.57 KB
Description 20V P-Channel MOSFET
Datasheet download datasheet WFY3P02 Datasheet
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Full PDF Text Transcription

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WFY3P02 −20V, P−Channel MOSFET , Features ■ -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
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