Datasheet Summary
- 20V, P- Channel MOSFET
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Features
- -3.2A, -20V, RDS(on)(Max 130mΩ)@VGS=-4.5V
- - 1.8 V Rated for Low Voltage Gate Drive
- SOT-23 Surface Mount for Small Footprint
- Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/Power Management for Portables and puting, Charging Circuits and Battery Protection
SOT-23
Marking:...