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WFY4101 - Trench Power MOSFET

Description

This Power MOSFET is produced using Winsemi’s advanced MOS technology.

This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.

Features

  • es.
  • -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V.
  • 1.8 V Rated for Low Voltage Gate Drive.
  • SOT-23 Surface Mount for Small Footprint.
  • Single Pulse Avalanche Energy Rated General.

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Datasheet Details

Part number WFY4101
Manufacturer WINSEMI SEMICONDUCTOR
File Size 352.75 KB
Description Trench Power MOSFET
Datasheet download datasheet WFY4101 Datasheet
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www.DataSheet.in WFY4101 Trench Power MOSFET −23 −20 V, Single P−Channel, SOT SOT− Features ■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V ■ −1.8 V Rated for Low Voltage Gate Drive ■ SOT-23 Surface Mount for Small Footprint ■ Single Pulse Avalanche Energy Rated General Description This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
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