WFY4101 Key Features
- 3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V
- 1.8 V Rated for Low Voltage Gate Drive
- SOT-23 Surface Mount for Small Footprint
- Single Pulse Avalanche Energy Rated
- Part: WFY4101
- Manufacturer: WINSEMI SEMICONDUCTOR
- Size: 352.75 KB
Related WINSEMI SEMICONDUCTOR Datasheets
| Part Number | Description |
|---|---|
| WFY3N02 | 20V N-Channel MOSFET |
| WFY3P02 | 20V P-Channel MOSFET |
WFY4101 Description
This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.