trench power mosfet.
* -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V
* −1.8 V Rated for Low Voltage Gate Drive
* SOT-23 Surface Mount for Small Footprint
* Single Pulse Avalanche E.
This Power MOSFET is produced using Winsemi’s advanced MOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. This devices is specially well suited for Load/P.
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