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WINSEMI SEMICONDUCTOR

WFY4101 Datasheet Preview

WFY4101 Datasheet

Trench Power MOSFET

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WFY4101
Trench Power MOSFET
−20 V, Single P−Channel, SOT−23
Features
■ -3.2A, -20V, RDS(on)(Max 85mΩ)@VGS=-4.5V
■ −1.8 V Rated for Low Voltage Gate Drive
■ SOT-23 Surface Mount for Small Footprint
■ Single Pulse Avalanche Energy Rated
General Description
This Power MOSFET is produced using Winsemi’s advanced
MOS technology. This latest technology has been especially
designed to minimize on-state resistance, have a high rugged
avalanche characteristics. This devices is specially well suited for
Load/Power Management for Portables and Computing,
Charging Circuits and Battery Protection
D
G
S
SOT-23
Absolute Maximum Ratings
Symbol
VDSS
ID
PD
ID
PD
IDM
VGS
ESD
TJ, Tstg
TL
Parameter
Drain Source Voltage
Continuous Drain Current(Note 1)
Total Power Dissipation(Note 1)
Continuous Drain Current(Note 2)
Total Power Dissipation(Note 2)
Drain Current Pulsed
Steady State
t≤10s
Steady State
t≤10s
Steady State
t=10s
Tc=25
Tc=85
Tc=25
Tc=25
Tc=25
Tc=85
Tc=25
Gate to Source Voltage
ESD Capability (Note 3)
C=100pF,RS = 1500Ω
Junction and Storage Temperature
Maximum lead Temperature for soldering purposes
Value
-20
−2.4
-1.7
-3.2
0.73
1.25
-1.8
-1.3
0.42
-7.5
±8
225
-55~150
260
Units
V
A
W
A
W
A
V
V
Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are
individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,
device functional operation is not implied, damage may occur and reliability may be affected.
Thermal Characteristics
Symbol
Parameter
RQJA
RQJA
RQJA
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 1)
Thermal Resistance, Junction-to-Ambient(Note 2)
Value
Min Typ Max
- - 170
110
300
Units
/W
/W
/W
Note 1: Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
Note 2: Surface−mounted on FR4 board using the minimum recommended pad size.
Note 3: ESD Rating Information: HBM Class 0
Rev. A Mar.2010
Copyright@WinSemi Semiconductor Co.,Ltd.,All rights reserved.
P02-1




WINSEMI SEMICONDUCTOR

WFY4101 Datasheet Preview

WFY4101 Datasheet

Trench Power MOSFET

No Preview Available !

www.DataSheet.in
WFY4101
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Gate leakage current(Note 4)
Drain cut−off current(Note 4)
Drain−source breakdown voltage
Gate threshold voltage
IGSS
IDSS
V(BR)DSS
VGS(th)
VGS = ±8 V, VDS = 0 V
VDS = -16 V, VGS = 0 V
ID = -250 μA, VGS = 0 V
VDS = VDS ID =-250 μA
VGS = −4.5 V, ID = −1.6 A
Drain−source ON resistance
RDS(ON)
VGS = −2.5 V, ID = −1.3 A
VGS = −1.8 V, ID = −0.9 A
Forward Transconductance
gfs VDS = −5.0 V, ID = −2.3 A
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time Turn−on time
(Note 5)
Fall time
Turn−off time
Ciss VDS = -10 V,
Crss VGS = 0 V,
Coss f = 1 MHz
tr VGS = −4.5 V,
ton VDS = −10 V,
tf ID = −1.6 A,
toff RG = 6.0 Ω
Total gate charge (gate−source plus
gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Qg
Qgs
Qgd
VGS = −4.5 V,
VDS = −10 V,
ID = −1.6 A
Reverse Recovery Charge
RG
Min
-
-
-20
-0.40
-
-
-
-
-
-
-
-
-
Type
-
-
-
-0.72
70
90
112
75
675
75
100
12.6
7.5
21.0
30.2
Max
±100
-1
-
-1.5
85
120
200
-
-
-
-
-
-
-
-
Unit
nA
μA
V
V
mΩ
S
pF
ns
- 7.5 8.5
nC
- 1.2 -
- 2.2 -
- 6.5 - Ω
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol Test Condition
Min
Continuous drain reverse current
IDR
--
Pulse drain reverse current
IDRP
-
-
Forward voltage (diode)
VDSF
IDR = -2.4A, VGS = 0 V
-
Reverse recovery time
Charge Time
Discharge Time
Reverse recovery charge
trr
IDR = -2.4A,
ta
VGS = 0 V,
tb
dIDR / dt = 100 A / μs
Qrr
-
-
Type
-
-
-0.82
12.8
9.9
3.0
1008
Max
-2.4
-7.5
-1.2
15
-
Unit
A
A
V
ns
ns
ns
μC
Note 4: Pulse Test: Pulse Width ≤300μs, Duty Cycle 3 2%.
Note 5: Switching characteristics are independent of operating junction temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
Steady, all for your advance
2/5


Part Number WFY4101
Description Trench Power MOSFET
Maker WINSEMI SEMICONDUCTOR
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