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BTA416Y-600C Datasheet Preview

BTA416Y-600C Datasheet

3Q Hi-Com Triac

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BTA416Y-600C
3Q Hi-Com Triac
7 March 2018
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally
insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high
dI/dt can occur. This "series C" triac will commutate the full RMS current at the maximum rated
junction temperature without the aid of a snubber. This device has high Tj operating capability and
an internally isolated mounting base.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High surge capability
High Tj(max)
Isolated mounting base with 2500 V (RMS) isolation
Less sensitive gate for high noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats (heating and cooling)
High power motor controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak off-
state voltage
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 108 °C; Fig. 1;
Fig. 2; Fig. 3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 16 A
- - 160 A
- - 176 A
- - 150 °C
2-
35 mA




WeEn

BTA416Y-600C Datasheet Preview

BTA416Y-600C Datasheet

3Q Hi-Com Triac

No Preview Available !

WeEn Semiconductors
BTA416Y-600C
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
dIcom/dt
rate of change of
commutating current
Conditions
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
IT = 20 A; Tj = 25 °C; Fig. 10
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; (without snubber
condition); gate open circuit
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A;
dVcom/dt = 20 V/µs; (without snubber
condition); gate open circuit
Min Typ Max Unit
2-
35 mA
2-
35 mA
- - 35 mA
- 1.2 1.5 V
500 - - V/µs
300 - - V/µs
10 - - A/ms
4 - - A/ms
5. Pinning information
Table 2. Pinning information
Pin Symbol Description
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
Simplified outline
mb
Graphic symbol
T2
sym051
T1
G
123
TO-220AB (SOT78D)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA416Y-600C
TO-220AB
Description
plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220
Version
SOT78D
BTA416Y-600C
Product data sheet
All information provided in this document is subject to legal disclaimers.
7 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13


Part Number BTA416Y-600C
Description 3Q Hi-Com Triac
Maker WeEn
Total Page 13 Pages
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