Datasheet4U Logo Datasheet4U.com

NXPSC20650W-A - Silicon Carbide Diode

Datasheet Summary

Description

Dual Silicon Carbide Schottky diode in a 3-lead TO-247 plastic package, designed for high frequency switched-mode power supplies.

This product is qualified to AEC-Q101 standard for use in automotive applications.

2.

Features

  • Highly stable switching performance.
  • High forward surge capability IFSM.
  • Extremely fast reverse recovery time.
  • Superior in efficiency to Silicon Diode alternatives.
  • Reduced losses in associated MOSFET.
  • Reduced EMI.
  • Reduced cooling requirements.
  • RoHS compliant.
  • AEC-Q101 compliant.
  • High junction operating temperature capability (Tj(max) = 175 °C) 3.

📥 Download Datasheet

Datasheet preview – NXPSC20650W-A

Datasheet Details

Part number NXPSC20650W-A
Manufacturer WeEn
File Size 356.90 KB
Description Silicon Carbide Diode
Datasheet download datasheet NXPSC20650W-A Datasheet
Additional preview pages of the NXPSC20650W-A datasheet.

📁 Similar Datasheet

Other Datasheets by WeEn

Full PDF Text Transcription

Click to expand full text
NXPSC20650W-A Silicon Carbide Diode Rev.01 25 February 2019 Product data sheet 1. General description Dual Silicon Carbide Schottky diode in a 3-lead TO-247 plastic package, designed for high frequency switched-mode power supplies. This product is qualified to AEC-Q101 standard for use in automotive applications. hRoHS alogen-Free AEC - Q101 Qualified 2. Features and benefits • Highly stable switching performance • High forward surge capability IFSM • Extremely fast reverse recovery time • Superior in efficiency to Silicon Diode alternatives • Reduced losses in associated MOSFET • Reduced EMI • Reduced cooling requirements • RoHS compliant • AEC-Q101 compliant • High junction operating temperature capability (Tj(max) = 175 °C) 3.
Published: |