logo
Datasheet4U.com - WG30R135W1
logo

WG30R135W1 Datasheet, IGBT, WeEn

WG30R135W1 Datasheet, IGBT, WeEn

WG30R135W1

datasheet Download (Size : 815.75KB)

PDF WG30R135W1 Datasheet
WG30R135W1

datasheet Download (Size : 815.75KB)

PDF WG30R135W1 Datasheet

WG30R135W1 Features and benefits

WG30R135W1 Features and benefits


* Reverse Conducting IGBT with Monolithic Body Diode
* Maximum Junction Temperature 175 °C
* Low Conduction Losses
* Positive Temperature efficient for Ea.

WG30R135W1 Application

WG30R135W1 Application


* Microwave ovens
* Induction heating
* Resonant converters
* Soft switching applications 4. Quick refe.

WG30R135W1 Description

WG30R135W1 Description

WG30R135W1 uses advanced Fine Trench Field-stop technology IGBT with monolithic body diode in TO-247 package. This device is part of Reverse-Conducting of IGBTs, which represents an optimum compromise between conduction and switching losses to maximi.

Image gallery

WG30R135W1 Page 1 WG30R135W1 Page 2 WG30R135W1 Page 3

TAGS

WG30R135W1
IGBT
WeEn

Manufacturer


WeEn

Related datasheet

WG30N65HA1

WG30N65HAW2

WG30N65HAX1

WG30N65HFB1

WG30N65HFW1

WG30N65HJ1

WG30N65MF1

WG320240A

WG320240B

WG320240B-FTC-V

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts