Datasheet Summary
N-Channel Silicon MOSFET
Rev.02
- 28 June 2024
Product data sheet
1. General description
WMS30N250E is a high performance logic level N-channel MOSFET in PDFN3.3X3.3 package, which utilizes advanced Trench MOSFET technology to provide low RDS(on) and gate charge. It is designed and qualified in a wide range of industrial and consumer applications. h RoHS alogen-Free
Lead-Free
2. Features and benefits
- High ESD sensitivity devices
- Advance High Cell Density Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Switching Losses
- Optimized Gate Charge to Minimize Driver Losses
- 100% UIS Tested
- RoHS pliant, Halogen Free and Lead...