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2SB649/2SB649A
PNP Epitaxial Planar Transistors
P b Lead(Pb)-Free
1. EMITTER 2. COLLECTOR 3. BASE
1
2
3
TO-126C
ABSOLUTE MAXIMUM RATINGS(TA=25ºC) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Disspation Junction Temperature Storage Temperature Symbol VCBO VCEO V www.DataSheet4U.com EBO IC PD Tj Tstg -120 6.0 -1.5 1.0 +150 -55 to +150 2SB649 -180 -160 2SB649A Unit V V V A W ˚C ˚C
WEITRON
http://www.weitron.com.tw
1/5
21-Mar-06
2SB649/2SB649A
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) (Countinued) Characteristics Collector-Emitter Breakdown Voltage IC = -1.0mA, IE = 0 Collector-Base Breakdown Voltage 2SB649 IC = -10mA, IB = 0 2SB649A Emitter-Base Breakdown Voltage IC = 0, IE = -1.
2SB649 Datasheet
