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2SD1802
NPN PLASTIC ENCAPSULATE TRANSISTORS
P b Lead(Pb)-Free
1.BASE 2.COLLECTOR 3.EMITTER 1 2 3
D-PAK(TO-252) ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
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Symbol VCBO VCEO VEBO IC PD Tj Tstg
Limits 60 50 6.0 3.0 1.0 -55 to +150 -55 to +150
Unit V V V µA W ˚C ˚C
ELECTRICAL CHARACTERISTICS(TA=25˚Cunless otherwise noted) Parameter Collector-Base Breakdown Voltage IC=10µA Symbol BVCBO BVCEO BVEBO ICBO IEBO Min 60 50 6.0 Typ Max 1.0 1.0 Unit V V V µA µA
Collector-Emitter Breakdown Voltage IC=1.0mA Emitter-Base Breakdown Voltage IE=10µA
Collector Cutoff Current VCB=40V Collector Cutoff Current VEB =4.