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NPN General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current
Total Device Dissipation TA=25 C
Junction Temperature
Storage, Temperature
Symbol VCEO VCBO VEBO
IC
PD
Tj
Tstg
S8050
TO-92
1. EMITTER
1
2. BASE 3. COLLECTOR
23
Value 25 40 5.0 500 0.625
150
-55 to +150
Unit Vdc Vdc Vdc mAdc
W
C
C
ELECTRICAL CHARACTERISTICS
Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) Collector Cutoff Current (VCE= 20 Vdc, IB =0) Collector Cutoff Current (VCB= 40 Vdc, IE=0) Emitter Cutoff Current (VEB= 3.
S8050 Datasheet
