WT4884AM Description
WT4884AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 12 AMPERE S DRAIN SOUR CE VOLTAGE 30 VOLTAGE D 1 3 S S 8 7 D 2 D 6.
WT4884AM Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V -Rugged and Reliable -SO-8
- Dynamic (3)
- 3150 680 510
- 27 13 127.5 55.5
- nS nS nS nS nc