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WT4884AM Datasheet Preview

WT4884AM Datasheet

Surface Mount N-Channel Enhancement Mode MOSFET

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Surface Mount N-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
RDS(ON) <6 m@VGS=10V
RDS(ON) <8.5 m@VGS=4.5V
*Rugged and Reliable
*SO-8 Package
WT4884AM
DRAIN CURRENT
12 AMPERES
DRAIN SOURCE VOLTAGE
30 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =125 C)(1)
Pulsed Drain Current (2)
Drain-Source Diode Forward Current (1)
VDS
VGS
ID
IDM
IS
Power Dissipation (1)
Maximax Junction-to-Ambient (1)
PD
R θJA
Value
30
-+20
12
44
1.7
2.5
50
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Device Marking
WT4884AM=STM4884A
Unite
V
V
A
A
A
W
C/W
C
WEITRON
http://www.weitron.com.tw
1/6
01-Aug-05




Weitron Technology

WT4884AM Datasheet Preview

WT4884AM Datasheet

Surface Mount N-Channel Enhancement Mode MOSFET

No Preview Available !

www.DataSheet4U.com
WT4884AM
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=250 uA
Gate-Source Leakage Current
VDS=0V, VGS=-+20V
Zero Gate Voltage Drain Current
VDS=24V, VGS=0V
Drain-Source On-Resistance
VGS=10V, ID=12A
VGS=4.5V, ID=10A
On-State Drain Current
VDS=10V, VGS=10V
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
rDS (on)
ID(on)
Min
30
1
-
-
-
-
20
Typ
-
1.6
-
-
6
8.5
-
Forward Transconductance
VDS=15V, ID=12A
Dynamic(3)
Input Capacitance
VDS=15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=15V, VGS=0V, f=1MHZ
gfs
Ciss
Coss
Crss
-
-
-
-
22
3150
680
510
Switching (3)
Turn-On Delay Time
VGS =10V,VDD =15V, ID=1A, RGEN=6
Rise Time
VGS =10V,VDD =15V, ID=1A, RGEN=6
Turn-Off Time
VGS =10V,VDD =15V, ID=1A, RGEN=6
Fall Time
VGS =10V,VDD =15V, ID=1A, RGEN=6
Total Gate Charge
VDS=15V, ID=12A, VGS =10V
VDS=15V, ID=12A, VGS =4.5V
Gate-Source Charge
VDS=15V, VGS=10V, ID=12A
Gate-Drain Charge
VDS=15V, VGS=10V, ID=12A
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.7A
td(on)
tr
td(off )
tf
-
-
-
-
27
13
127.5
55.5
Qg -
-
Qgs -
Qgd -
65
30.5
11
13
VSD - 0.75
Note: 1. Surface Mounted on FR4 Board t <_ 10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle <_ 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
Max
-
3
-+100
1
7
11
-
-
Unit
V
V
nA
uA
m
A
S
-
- PF
-
- nS
- nS
- nS
- nS
nc
-
-
- nc
- nc
1.2 V
01-Aug-05


Part Number WT4884AM
Description Surface Mount N-Channel Enhancement Mode MOSFET
Maker Weitron Technology
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