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WT4884AM
Surface Mount N-Channel Enhancement Mode MOSFET
P b Lead(Pb)-Free
DRAIN CURRENT 12 AMPERE S DRAIN SOUR CE VOLTAGE 30 VOLTAGE
D
1 3
S S
8 7
D
2
D
6
S
Features:
*Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V *Rugged and Reliable *SO-8 Package
D
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 30 Unite V V A A A W C/W C
G
4
5
1
SO-8
+20 12 44 1.7 2.