WT4410M Datasheet | Weitron Technology

Features : - Super high dense cell design for low RDS(ON) R DS(ON) <11 mΩ @VGS =10V R DS(ON) <15 m Ω@VGS =4.5V - Rugged and Reliable - SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 30 Unite V V A A A W C/W C SO-8 +20 10 30 2.3 2.5 50 -55 to 150 Device Marking WT4410M=SDM4410 http://.weitron..tw WEITRON 1/6 01-Jul-05 .. Electrical Characteristics Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ - Max 3 +100 1 13.5 20 Unit V V n A u A mΩ Drain-Source Breakdown Voltage VGS=0V, ID=250 u A Gate-Source Threshold Voltage VDS=VGS, ID=250 u A Gate-Source Leakage Current +16V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=24V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=10A VGS=4.5V, ID=5A On-State Drain Current VDS=10V, VGS=10A Forward Transconductance VDS=10V, ID=20A 30 1 - 40 r DS (on) 11 15 ID(on) gfs - A S - Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 1375 670 200 Switching...