WT4410M Description
WT4410M Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 10 AMPERES DRAIN SOURCE V OLTAGE 30 VOLTAGE D 1 3 S S 8 7 D 2 D 6.
WT4410M Key Features
- Super high dense cell design for low RDS(ON) R DS(ON) <11 mΩ @VGS =10V R DS(ON) <15 m Ω@VGS =4.5V -Rugged and Reliable -
- Dynamic (3)
- 1375 670 200
- 30 32 132 30
- nS nS nS nS nc