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WT4884AM - Surface Mount N-Channel Enhancement Mode MOSFET

Key Features

  • Super high dense cell design for low RDS(ON) R DS(ON).

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Datasheet Details

Part number WT4884AM
Manufacturer Weitron Technology
File Size 274.38 KB
Description Surface Mount N-Channel Enhancement Mode MOSFET
Datasheet download datasheet WT4884AM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com WT4884AM Surface Mount N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free DRAIN CURRENT 12 AMPERE S DRAIN SOUR CE VOLTAGE 30 VOLTAGE D 1 3 S S 8 7 D 2 D 6 S Features: *Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V *Rugged and Reliable *SO-8 Package D Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 30 Unite V V A A A W C/W C G 4 5 1 SO-8 +20 12 44 1.7 2.