WT4884AM Datasheet | Weitron Technology

Features : - Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V - Rugged and Reliable - SO-8 Package Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 30 Unite V V A A A W C/W C SO-8 +20 12 44 1.7 2.5 50 -55 to 150 Device Marking WT4884AM=STM4884A http://.weitron..tw WEITRON 1/6 01-Aug-05 .. Electrical Characteristics Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ - Max 3 +100 1 7 11 Unit V V n A u A mΩ Drain-Source Breakdown Voltage VGS=0V, ID=250 u A Gate-Source Threshold Voltage VDS=VGS, ID=250 u A Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=24V, VGS=0V Drain-Source On-Resistance VGS=10V, ID=12A VGS=4.5V, ID=10A On-State Drain Current VDS=10V, VGS=10V Forward Transconductance VDS=15V, ID=12A 30 1 - 20 r DS (on) 6 8.5 ID(on) gfs - A S - Dynamic (3) Input Capacitance VDS=15V, VGS=0V, f=1MHZ Output Capacitance VDS=15V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=15V, VGS=0V, f=1MHZ Ciss Coss Crss - 3150 680 510 Switching (3) Turn-On Delay Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω Rise Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω Turn-Off Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω Fall Time VGS =10V,VDD =15V, ID=1A, RGEN=6Ω Total Gate Charge VDS=15V, ID=12A, VGS =10V VDS=15V, ID=12A, V GS =4.5V Gate-Source Charge VDS=15V, VGS=10V, ID=12A Gate-Drain Charge VDS=15V, VGS=10V, ID=12A Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A td(on) tr td(off ) tf...