Weitron Technology WT4884AM
Surface Mount N-Channel Enhancement Mode MOSFET
| Part No. | WT4884AM |
|---|---|
| Datasheet | WT4884AM Download |
| Manufacturer |  Weitron Technology |
| Description | Surface Mount N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
FEATURES
: *Super high dense cell design for low RDS(ON) R DS(ON) <6 mΩ@VGS=10V R DS(ON) <8.5 mΩ@VGS=4.5V *Rugged and Reliable *SO-8 Package DMAXIMUM RATINGS
(TA=25 C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ =125 C) (1) Pulsed Drain Current (2) Drain-Source Diode Forward Current (1) Power Dissipation (1) Maximax Junction-to-Ambient (1) Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD R θ JA TJ, Tstg Value 30 Unite V V A A A W C/W C G 4 5 1 SO-8 +20 12 44 1.7 2.5 50 -55 to 150 Device Marking WT4884AM=STM4884A WEITRON 1/6 01-Aug-05 WT4884AMELECTRICAL CHARACTERISTICS
Static (2) Characteristic (TA=25 C Unless otherwise noted) Symbol V(BR)DSS VGS (th) IGSS IDSS Min Typ 1.6 - Max 3 +100 1 7 11 Unit V V nA uA mΩ Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=250 uA Gate-Source Leakage Current +20V VDS=0V, VGS=Zero Gate Voltage Drain Current VDS=24V, VGS=0V D...
