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Weitron Technology

WT9435M Datasheet Preview

WT9435M Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

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Surface Mount P-Channel
Enhancement Mode MOSFET
P b Lead(Pb)-Free
Features:
*Super high dense cell design for low RDS(ON)
RDS(ON) <55 m@VGS =-10V
RDS(ON) <85 m@VGS =-4.5V
*Rugged and Reliable
*SO-8 Package
WT9435M
DRAIN CURRENT
-4.8 AMPERS
DRAIN SOUCE VOLTAGE
-30 VOLTAGE
1
SO-8
Maximum Ratings (TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ =125 C)(1)
Pulsed Drain Current (2)
Drain-Source Diode Forward Current (1)
VDS
VGS
ID
IDM
IS
Power Dissipation (1)
Maximax Junction-to-Ambient
PD
R θJA
Value
-30
-+20
-4.8
-24
-1.7
2.5
50
Operating Junction and Storage
Temperature Range
TJ, Tstg
-55 to 150
Device Marking
WT9435M=STM9435
Unite
V
V
A
A
A
W
C/W
C
WEITRON
http://www.weitron.com.tw
1/6
01-Jul-05




Weitron Technology

WT9435M Datasheet Preview

WT9435M Datasheet

Surface Mount P-Channel Enhancement Mode MOSFET

No Preview Available !

WT9435M
www.DataSheet4U.com
Electrical Characteristics (TA=25 C Unless otherwise noted)
Characteristic
Static (2)
Drain-Source Breakdown Voltage
VGS=0V, ID=-250 uA
Gate-Source Threshold Voltage
VDS=VGS, ID=-250 uA
Gate-Source Leakage Current
VDS=0V, VGS=-+20V
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
Drain-Source On-Resistance
VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
On-State Drain Current
VDS=-5V, VGS=-10A
Symbol
V(BR)DSS
VGS (th)
IGSS
IDSS
rDS (on)
ID(on)
Min
-30
-1
-
-
-
-
-20
Typ
-
-1.5
-
-
45
75
-
Forward Transconductance
VDS=-5V, ID=-5.3A
Dynamic(3)
Input Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance
VDS=-15V, VGS=0V, f=1MHZ
Reverse Transfer Capacitance
VDS=-15V, VGS=0V, f=1MHZ
gfs
Ciss
Coss
Crss
-
-
-
-
5
582
125
86
Switching (3)
Turn-On Delay Time
VGEN =-10V,VDD =-15V, ID=--1A, RL=15 ,RGEN=6
Rise Time
VGEN =-10V,VDD =-15V, ID=--1A, RL=15 ,RGEN=6
td(on)
tr
-
-
9
10
Turn-Off Time
VGEN =-10V,VDD =-15V, ID=--1A, RL=15 ,RGEN=6
Fall Time
VGEN =-10V,VDD =-15V, ID=--1A, RL=15 ,RGEN=6
Total Gate Charge
VDS=-15V, ID=-5.3A, VGS=-10V
VDS=-15V, ID=-5.3A, VGS =-4.5V
td(off )
tf
Qg
- 37
- 23
- 11.7
- 5.7
Gate-Source Charge
VDS=-15V, ID=-5.3A, VGS=-10V
Gate-Drain Charge
VDS=-15V, ID=-5.3A, VGS=-10V
Drain-Source Diode Forward Voltage
VGS=0V, IS=-1.7A
Qgs -
Qgd -
2.1
2.9
VSD - -0.84
Note: 1. Surface Mounted on FR4 Board t <_ 10sec.
2. Pulse Test : PW<_ 300us, Duty Cycle <_ 2%.
3. Guaranteed by Design, not Subject to Production Testing.
WEITRON
http://www.weitron.com.tw
2/6
Max
-
-2.5
-+100
-1
55
85
-
-
Unit
V
V
nA
uA
m
A
S
-
- PF
-
- nS
- nS
- nS
- nS
- nc
-
- nc
- nc
-1.2 V
01-Jul-05


Part Number WT9435M
Description Surface Mount P-Channel Enhancement Mode MOSFET
Maker Weitron Technology
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