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WTL2602
N-Channel Enhancement Mode Power MOSFET
P b Lead(Pb)-Free
3 GATE 1,2,5,6 DRAIN
DRAIN CURRENT 6.3 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 34mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package
4 SOURCE
1
6
5
4
2
3
SOT-26
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating Drain-Source Voltage Gate-Source Voltage
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Symbol VDS VGS ID IDM PD RθJA TJ,Tstg
Value 20 ±12 6.3 5 30 2 62.5 -55~+150
Unit V
Continuous Drain Current3, VGS@4.5V, TA=25˚C TA=70˚C Pulsed Drain Current1,2
A W ˚C/W ˚C
Total Power Dissipation(TA=25˚C) Maximum Junction-ambient Operating Junction and Storage Temperature Range
Device Marking
WTL2602=2602
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WTL2602 Datasheet
