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WTL2622 - Dual N-Channel Enhancement Mode MOSFET

Key Features

  • Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.5V.
  • Rugged and Reliable.
  • Capable of 2.5V Gate Drive.
  • Simple Drive Requirement.
  • SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ±10 2.5 8 1.25 1 125 -55~+150 Unit V Continuous Drain Current1, VGS@4.5V, TA=25˚C -Puls.

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Datasheet Details

Part number WTL2622
Manufacturer Weitron Technology
File Size 599.24 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet WTL2622 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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WTL2622 Dual N-Channel Enhancement Mode MOSFET P b Lead(Pb)-Free 1 GATE 6 DRAIN DRAIN CURRENT 2.5 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 80mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 2 SOURCE 4 DRAIN 1 6 5 4 2 3 SOT-26 3 GATE 5 SOURCE Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg Value 20 ±10 2.5 8 1.25 1 125 -55~+150 Unit V Continuous Drain Current1, VGS@4.