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WTL2602 - N-Channel Enhancement Mode Power MOSFET

Features

  • Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 34mΩ@VGS=4.5V.
  • Rugged and Reliable.
  • Capable of 2.5V Gate Drive.
  • Simple Drive Requirement.
  • SOT-26 Package 4 SOURCE 1 6 5 4 2 3 SOT-26 Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www. DataSheet4U. com Symbol VDS VGS ID IDM PD RθJA TJ,Tstg Value 20 ±12 6.3 5 30 2 62.5 -55~+150 Unit V Continuous Drain Current3, VGS@4.5V, TA=25˚C TA=70˚C Pulsed Drain Current1,.

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Datasheet Details

Part number WTL2602
Manufacturer Weitron Technology
File Size 628.69 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet WTL2602 Datasheet

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Full PDF Text Transcription

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WTL2602 N-Channel Enhancement Mode Power MOSFET P b Lead(Pb)-Free 3 GATE 1,2,5,6 DRAIN DRAIN CURRENT 6.3 AMPERES DRAIN SOURCE VOLTAGE 20 VOLTAGE Features: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 34mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 4 SOURCE 1 6 5 4 2 3 SOT-26 Maximum Ratings (TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Symbol VDS VGS ID IDM PD RθJA TJ,Tstg Value 20 ±12 6.3 5 30 2 62.5 -55~+150 Unit V Continuous Drain Current3, VGS@4.5V, TA=25˚C TA=70˚C Pulsed Drain Current1,2 A W ˚C/W ˚C Total Power Dissipation(TA=25˚C) Maximum Junction-ambient Operating Junction and Storage Temperature Range Device Marking WTL2602=2602 http:www.
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