Weitron Technology WTL2602
N-Channel Enhancement Mode Power MOSFET
| Part No. | WTL2602 |
|---|---|
| Datasheet | WTL2602 Download |
| Manufacturer |  Weitron Technology |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
: *Super High Dense Cell Design For Low RDS(ON) RDS(ON) < 34mΩ@VGS=4.5V *Rugged and Reliable *Capable of 2.5V Gate Drive *Simple Drive Requirement *SOT-26 Package 4 SOURCE 1 6 5 4 2 3 SOT-26MAXIMUM RATINGS
(TA=25˚C Unless Otherwise Specified) Rating Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS ID IDM PD RθJA TJ,Tstg Value 20 ±12 6.3 5 30 2 62.5 -55~+150 Unit V Continuous Drain Current3, VGS@4.5V, TA=25˚C TA=70˚C Pulsed Drain Current1,2 A W ˚C/W ˚C Total Power Dissipation(TA=25˚C) Maximum Junction-ambient Operating Junction and Storage Temperature Range Device Marking WTL2602=2602 http: WEITRON 1/6 08-Sep-05 WTL2602ELECTRICAL CHARACTERISTICS
(TA = 25℃ Characteristic Unless otherwise noted) Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS=0,ID=250 μA Gate-Source Threshold Voltage VDS=VGS,ID=250 μA Gate-Source Leakage current VGS=±12V Drain-SourceLeakage Current(Tj=25˚C) VDS=20V,VGS=0 Drain-SourceLeakage Current(Tj=55˚C) VDS=16V,VGS=0 Drain-SourceOn-Re...
