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WV3HG2128M72AER-D6 - 2GB - 2x128Mx72 DDR2 SDRAM REGISTERED

General Description

The WV3HG2128M72AER is a 128Mx72 Double Data Rate DDR2 SDRAM high density module.

This memory module consists of thirty six 128Mx4 bit with 4 banks DDR2 Synchronous DRAMs in FBGA packages, mounted on a 240-pin DIMM FR4 substrate.

240 Pin DIMM

Key Features

  • 240-pin, dual in-line memory module Fast data transfer rates: PC2-4200 and PC2-3200 Utilizes 533 and 400 Mb/s DDR2 SDRAM components VCC = VCCQ = 1.8V± 0.1V VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3 and 4 Adjustable data-.

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Datasheet Details

Part number WV3HG2128M72AER-D6
Manufacturer White Electronic Designs
File Size 190.99 KB
Description 2GB - 2x128Mx72 DDR2 SDRAM REGISTERED
Datasheet download datasheet WV3HG2128M72AER-D6 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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White Electronic Designs WV3HG2128M72AER-D6 ADVANCED* 2GB – 2x128Mx72 DDR2 SDRAM REGISTERED, w/PLL FEATURES 240-pin, dual in-line memory module Fast data transfer rates: PC2-4200 and PC2-3200 Utilizes 533 and 400 Mb/s DDR2 SDRAM components VCC = VCCQ = 1.8V± 0.1V VCCSPD = 1.7V to 3.6V JEDEC standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Four-bit prefetch architecture DLL to align DQ and DQS transitions with CK Multiple internal device banks for concurrent operation Supports duplicate output strobe (RDQS/RDQS#) Programmable CAS# latency (CL): 3 and 4 Adjustable data-output drive strength On-die termination (ODT) Serial Presence Detect (SPD) with EEPROM 64ms: 8,192 cycle refresh Gold edge contacts Product is lead-free www.DataSheet4U.