900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






WillSEMI

WCR380N65T Datasheet Preview

WCR380N65T Datasheet

MOSFET

No Preview Available !

WCR380N65T/WCR380N65TF/ WCR380N65TH
650V N-Channel Super Junction MOSFET
WCR380N65T series
Description
Features
The WCR380N65T series is new generation of high
voltage MOSFET family that is utilizing an advanced
charge balance mechanism for outstanding low
on-resistance and lower gate charge performance. This
advanced technology has been tailored to minimize
conduction loss, provide superior switching performance,
and withstand extreme dv/dt rate and higher avalanche
energy. This device is suitable for various AC/DC power
conversion in switching mode operation for higher
efficiency.
700V@TJ=150°C
Typ.RDS(on)=0.33
Low gate charge(typ. Qg= 32nC)
100% avalanche tested
100% Rg tested
Order Information
Device
Package
Marking
Units/Tube Units/Real
WCR380N65T-3/T
TO-220
WCR380N65TYYWW
50
WCR380N65TF-3/T TO-220F WCR380N65TFYYWW
50
WCR380N65TH-3/TR TO-263E-2 WCR380N65THYW
800
Note 1: WCR380N65T=Device code ; YY=Year ;WW=Week (A~z);
Note 2: WCR380N65TF=Device code ; YY=Year ;WW=Week (A~z);
Note 3: WCR380N65TH=Device code ; Y=Year ;W=Week (A~z);
Absolution Maximum Ratings TA=25 oC unless otherwise noted
Parameter
Symbol
WCR380N65T
WCR380N65TH
TO-220
TO-220F
WCR380N65TF
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
650
±30
Continuous Drain Current A TC=25°C
TC=100°C
Pulsed Drain Current B
Single Pulsed Avalanche Energy C
Avalanche Current B
Repetitive Avalanche Energy B
ID
IDM
EAS
IAR
EAR
10.6
6.7
30
215
2.7
0.30
Power Dissipation
TC=25°C
Derate above 25°C
PD
83
0.66
31.2
0.25
Operating and Storage Temperature Range TJ,TSTG
-55~150
Lead Temperature
TL 260
Thermal Resistance Ratings
Maximum Junction-to-Ambient
RθJA
60
80
Maximum Junction-to-Case
RθJC
1.5
4
TO-263E-2
Unit
V
A
A
mJ
A
mJ
W
W/°C
°C
°C
°C/W
Will Semiconductor Ltd.
1 Nov, 2016 - Rev.1.1




WillSEMI

WCR380N65T Datasheet Preview

WCR380N65T Datasheet

MOSFET

No Preview Available !

Electronics Characteristics (TA=25oC, unless otherwise noted)
WCR380N65T series
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-source Leakage Current
BVDSS
IDSS
IGSS
VGS = 0 V, ID = 250uA,TJ=25°C
VGS = 0 V, ID = 250uA,TJ=150°C
VDS = 600V, VGS = 0V,TJ=25°C
VDS = 0 V, VGS =±30 V
ON CHARACTERISTICS
Gate Threshold Voltage
Drain-to-source On-resistance
Forward Transconductance
VGS(TH)
RDS(on)
Gfs
VGS = VDS, ID = 250uA
VGS = 10V, ID = 5A (NOTE D)
VDS= 40V, ID= 5A
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate resistance
CISS
COSS
CRSS
QG(TOT)
QGS
QGD
Rg
VGS = 0 V,
f = 1.0 MHz, VDS = 400 V
VGS = 10 V,VDS = 480 V,
ID = 10A
VGS=0V,VDS=0V,F=1MHZ
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VGS = 10V,
VDS = 400 V,
ID = 11A, RG=20
Drain to Source Diode Characteristics and Maximum Ratings
Forward Voltage
VSD VGS = 0 V, IS = 9.5A
Body-Diode Continuous Current
Body-Diode Pulsed Current
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Peak reverse recovery Current
IS
ISM
Trr
Qrr
Irrm
IF=9.5A,dI/dt=100A/us,
VDS=100V
Min
650
2.5
Typ Max Unit
700
1
±100
V
V
uA
nA
4.5
0.33 0.38
20
V
s
1140
30
4
32
7.3
14.7
7.4
pF
nC
21
38
ns
84
27
1.5
10
30
347
4
23
V
A
A
nS
uC
A
NOTES:
A. Drain current limited by maximum junction temperature. Maximum duty cycle D=0.75
B. Pulse width limited by maximum junction temperature
C. L=60mH, IAS=2.7A, VDD=50V, Starting TJ=25
D. Pulse Test: Pulse width300us, Duty Cycle 2%
E. Essentially Independent of Operating Temperature Typical Characteristics
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heat sink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
Will Semiconductor Ltd.
2 Nov, 2016 - Rev.1.1


Part Number WCR380N65T
Description MOSFET
Maker WillSEMI
Total Page 9 Pages
PDF Download

WCR380N65T Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 WCR380N65T MOSFET
WillSEMI
2 WCR380N65TF MOSFET
WillSEMI
3 WCR380N65TH MOSFET
WillSEMI





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy