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WNM01N10 Datasheet, WillSEMI

WNM01N10 Datasheet, WillSEMI

WNM01N10

datasheet Download (Size : 0.96MB)

WNM01N10 Datasheet

WNM01N10 mosfet equivalent, mosfet.

WNM01N10

datasheet Download (Size : 0.96MB)

WNM01N10 Datasheet

Features and benefits


* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Small package SOT-23 Applications
* Driver for.

Application


* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch

Description

The WNM01N10 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit..

Image gallery

WNM01N10 Page 1 WNM01N10 Page 2 WNM01N10 Page 3

TAGS

WNM01N10
MOSFET
WillSEMI

Manufacturer


WillSEMI

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