D S G SOT-23 D 3 12 GS Pin configuration (Top view)
* Trench Technology
* Supper high density cell design
* Excellent ON resistance
* Extremely Low Thre.

* DC/DC converters
* Power supply converters circuit
* Load/Power Switching for portable device PD = Device.

The WPM3022 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. S.

WPM3021

WPM3023

WPM3004

WPM3005

WPM3012

WPM3015

WPM3401

WPM3407

WPM1480

WPM1481

WPM1483

WPM1485

WPM1488