WNMD2162A Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package PDFN2.9×2.8-8L
- Part: WNMD2162A
- Manufacturer: Will Semiconductor
- Size: 945.66 KB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNMD2162 | Dual N-Channel MOSFET |
| WNMD2160 | Dual N-Channel MOSFET |
| WNMD2165 | Dual N-Channel MOSFET |
| WNMD2166 | Dual N-Channel MOSFET |
| WNMD2167 | Dual N-Channel MOSFET |
WNMD2162A Description
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162A is Pb-free and Halogen-free.
WNMD2162A Applications
- Driver for Relay, Solenoid, Motor, LED etc