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WNMD2162A Datasheet Dual N-Channel MOSFET

Manufacturer: Will Semiconductor

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Datasheet Details

Part number WNMD2162A
Manufacturer Will Semiconductor
File Size 945.66 KB
Description Dual N-Channel MOSFET
Download WNMD2162A Download (PDF)

General Description

s Rds(on) (Ω) 0.014@ VGS=4.5V 0.015@ VGS=3.1V 0.016@ VGS=2.5V The WNMD2162A is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

This device is suitable for use in DC-DC conversion, power switch and charging circuit.

Overview

WNMD2162A Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package PDFN2.9×2.8-8L WNMD2162A Http://www. sh-willsemi. com PDFN2.9×2.8-8L D2 D2 D1 D1 8 7 65 1 23 4 S2 G2 S1 G1 Pin configuration (Top view) 8 765 2162A YYWW 1 2 34 2162A = Device Code YY = Year WW = Week.

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