| Part number | WNMD2165 |
|---|---|
| Datasheet | WNMD2165-WillSemiconductor.pdf |
| File Size | 1.70 MB |
| Manufacturer | Will Semiconductor |
| Description | Dual N-Channel MOSFET |
|
|
WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
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