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WNMD2162A - Dual N-Channel MOSFET

General Description

The WNMD2162A is Dual N-Channel enhancement MOS Field Effect Transistor.

Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.

Key Features

  • Trench Technology.
  • Supper high density cell design.
  • Excellent ON resistance for higher DC current.
  • Extremely Low Threshold Voltage.
  • Small package PDFN2.9×2.8-8L WNMD2162A Http://www. sh-willsemi. com PDFN2.9×2.8-8L D2 D2 D1 D1 8 7 65 1 23 4 S2 G2 S1 G1 Pin configuration (Top view) 8 765 2162A YYWW 1 2 34 2162A = Device Code YY = Year WW = Week.

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Datasheet Details

Part number WNMD2162A
Manufacturer Will Semiconductor
File Size 945.66 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet WNMD2162A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
WNMD2162A Dual N-Channel, 20V, 4.8A, Power MOSFET VDS (V) 20 ESD Protected Descriptions Rds(on) (Ω) 0.014@ VGS=4.5V 0.015@ VGS=3.1V 0.016@ VGS=2.5V The WNMD2162A is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit. Standard Product WNMD2162A is Pb-free and Halogen-free. Features  Trench Technology  Supper high density cell design  Excellent ON resistance for higher DC current  Extremely Low Threshold Voltage  Small package PDFN2.9×2.8-8L WNMD2162A Http://www.sh-willsemi.com PDFN2.9×2.