WNMD6003 Key Features
- Trench Technology
- Supper high density cell design
- Excellent ON resistance for higher DC current
- Extremely Low Threshold Voltage
- Small package SOT-563
- Part: WNMD6003
- Manufacturer: Will Semiconductor
- Size: 1.50 MB
Related Will Semiconductor Datasheets
| Part Number | Description |
|---|---|
| WNMD2153 | Dual N-Channel MOSFET |
| WNMD2154 | Dual N-Channel MOSFET |
| WNMD2154A | 20V 820mA Dual N-Channel Power MOSFET |
| WNMD2155 | Dual N-Channel MOSFET |
| WNMD2156 | Dual N-Channel MOSFET |
WNMD6003 Description
WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNMD6003 Applications
- Driver for Relay, Solenoid, Motor, LED etc