Datasheet Details
| Part number | WNMD6003 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 1.50 MB |
| Description | Dual N-Channel MOSFET |
| Download | WNMD6003 Download (PDF) |
|
|
| Part number | WNMD6003 |
|---|---|
| Manufacturer | Will Semiconductor |
| File Size | 1.50 MB |
| Description | Dual N-Channel MOSFET |
| Download | WNMD6003 Download (PDF) |
|
|
|
s The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.
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