WNMD6003 Dual N-Channel MOSFET

Will Semiconductor

Description

WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM .
The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor.

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Datasheet Specifications

Part number: WNMD6003
Manufacturer: Will Semiconductor
File Size: 1.50 MB
Datasheet: WNMD6003-WillSemiconductor.pdf
Description: Dual N-Channel MOSFET

Features

* Trench Technology
* Supper high density cell design
* Excellent ON resistance for higher DC current
* Extremely Low Threshold Voltage

Applications

* Driver for Relay, Solenoid, Motor, LED etc.
* DC-DC converter circuit
* Power Switch
* Load Switch
* Charging Pin configuration (Top view) 6 54 60
* 1 23 60 = Device Code
* = Month (A~Z) Marking Order information Device Package Shipping WNMD6003-6/TR SOT-563 300

WNMD6003 Distributors

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WNMD6003 Dual N-Channel MOSFET Will Semiconductor

Will Semiconductor WNMD6003-like datasheet