SFF10N60 Datasheet, WinSemi

� 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability SFF10N60 Silicon N-Cha.

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well su.