Datasheet4U Logo Datasheet4U.com

SFF10N60 - Silicon N-Channel MOSFET

Description

This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology.

This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Features

  • 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V.
  • Ultra-low Gate Charge(34nC).
  • Fast Switching Capability.
  • 100%Avalanche Tested.
  • Improved dv/dt capability SFF10N60 Silicon N-Channel MOSFET General.

📥 Download Datasheet

Datasheet Details

Part number SFF10N60
Manufacturer WinSemi
File Size 574.29 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SFF10N60 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SFF10N100-3 N-Channel POWER MOSFET SSDI
SFF10N100B N-Channel Power MOSFET SSDI
SFF10N100M N-Channel Power MOSFET SSDI
SFF10N100N N-Channel Power MOSFET SSDI
SFF10N100P N-Channel Power MOSFET SSDI

Other Datasheets by WinSemi

Part Number Description

Full PDF Text Transcription

Click to expand full text
Features � 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V � Ultra-low Gate Charge(34nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability SFF10N60 Silicon N-Channel MOSFET General Description This Power MOSFET is produced using Winsemi's advanced planar stripe,DMOS technology. This latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for high efficiency switch model power supplies , power factor correction ,UPS and a electronic lamp ballast base on half bridge.
Published: |