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K2611 - Silicon N-Channel MOSFET

Features ■ 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 72nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junc
Rating: 1 (11 votes)
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K2698 - Silicon N-Channel MOSFET

Features ■ 18A,500V,RDS(on)(Max0.27Ω)@VGS=10V ■ Ultra-low Gate charge(Typical 42nC) ■ Fast Switching Capability ■ 100%Avalanche Tested ■ Maximum Junct
Rating: 1 (9 votes)
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WFP13N50 - Silicon N-Channel MOSFET

Features � 13A,500V, RDS(on)(Max0.46Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Junc
Rating: 1 (6 votes)
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WFF8N65B - Silicon N-Channel MOSFET

Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Vol
Rating: 1 (6 votes)
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WFF9N90 - Silicon N-Channel MOSFET

WFF9N90 Product Description Silicon N-Channel MOSFET Features � 9A,900V,RDS(on)(Max1.35Ω)@VGS=10V � Ultra-low Gate charge(Typical 43nC) � Fast Switchi
Rating: 1 (6 votes)
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WFD7N65S - Power MOSFET

WFD7N65S 650V Super-Junction Power MOSFET Features � Ultra low Rdson � Ultra low gate charge (typ. Qg =19nC) � 100% UIS tested � RoHS compl iant Gene
Rating: 1 (6 votes)
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WFN1N60C - Power MOSFET

Features � 1.2A,600V, RDS(on)(Max8.5Ω)@VGS=10V � Ultra-low Gate charge(Typical 9.1nC) � Fast Switching Capability � 100%Avalanche Tested � Maximum Jun
Rating: 1 (6 votes)
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WGW15G120N - Low Loss IGBT

Features ■ 15A,1200V,VCE(sat)(Typ.=2.4v)@IC=15A & Tc=100℃ ■ low Gate charge(Typ.= 85nC) ■ NPT Technology, Positive temperature coefficient ■ Low EMI ■
Rating: 1 (6 votes)

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