Datasheet4U Logo Datasheet4U.com

WFP18N20 - Silicon N-Channel MOSFET

General Description

This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology.

especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.

Key Features

  • 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General.

📥 Download Datasheet

Datasheet Details

Part number WFP18N20
Manufacturer WINSEMI SEMICONDUCTOR
File Size 666.52 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet WFP18N20 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
WFP18N50 Silicon N-Channel MOSFET Winsemi
WFP10N60 N-Channel MOSFET Wisdom technologies
WFP12N60 N-Channel MOSFET Wisdom technologies
WFP13N50 Silicon N-Channel MOSFET Winsemi
WFP13N50C Silicon N-Channel MOSFET Winsemi

Other Datasheets by WINSEMI SEMICONDUCTOR

Part Number Description
WFP10N60 Silicon N-Channel MOSFET
WFP10N65 Silicon N-Channel MOSFET
WFP12N60 Silicon N-Channel MOSFET
WFP12N65 Silicon N-Channel MOSFET
WFP2N60 Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.in WFP18N20 Silicon N-Channel MOSFET Features � � � � � 18A,200V,RDS(on)(Max 0.18Ω)@VGS=10V Ultra-low Gate Charge(Typical 40nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advanced been planar stripe,DMOS technology. This latest technology has especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. This devices is specially well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters,and DC motor control.