W25Q80DVBYIG Datasheet | Winbond

W25Q80DV/DL 2.5V AND 3V 8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date:October 02, 2015 Preli mry-Revision H W25Q80DV/DL 1. GENERAL DESCRIPTION The W25Q80DV/DL (8M-bit) Serial Flash memory provides a storage solution for systems with limited space, pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP) and storing voice, text and data. The W25Q80DV operates on a single 2.7V to 3.6V and the W25Q80DL operateds on a single 2.3V to 3.6V power supply with current consumption as low as 1µA for power-down. The W25Q80DV/DL array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128 (32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80DV/DL has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.) The W25Q80DV supports the standard Serial Peripheral Interface (SPI), and a high performance Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1 (DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard Asynchronous 8 and 16-bit Parallel Flash memories. A Hold pin, Write Protect pin and programmable write protection, with top, bottom or plement array control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification with a 64-bit Unique Serial Number. 2. Features -...