W29EE011 memory equivalent, 128k x 8 cmos flash memory.
* Single 5-volt program and erase operations
* Fast page-write operations
− 128 bytes per page − Page program cycle: 10 mS (max.) − Effective byte-program cycle t.
The W29EE011 is a 1-megabit, 5-volt only CMOS flash memory organized as 128K × 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE011 resu.
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