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W967D6HB Datasheet Preview

W967D6HB Datasheet

CellularRAM

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W967D6HB
1. GENERAL DESCRIPTION
128Mb Async./Page,Syn./Burst CellularRAM
Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for
low-power, portable applications. The device has a DRAM core organized. These devices include an industry-
standard burst mode Flash interface that dramatically increases read/write bandwidth compared with other low-
power SRAM or Pseudo SRAM offerings.
To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a transparent self refresh
mechanism. The hidden refresh requires no additional support from the system memory controller and has no
significant impact on device READ/WRITE performance.
Two user-accessible control registers define device operation. The Bus Configuration Register (BCR) defines how
the CellularRAM device interacts with the system memory bus and is nearly identical to its counterpart on burst
mode Flash devices. The Refresh Configuration Register (RCR) is used to control how refresh is performed on the
DRAM array. These registers are automatically loaded with default settings during power-up and can be updated
anytime during normal operation.
Special attention has been focused on standby current consumption during self refresh. CellularRAM products
include three mechanisms to minimize standby current. Partial array refresh (PAR) enables the system to limit
refresh to only that part of the DRAM array that contains essential data. Temperature compensated refresh (TCR)
uses an on-chip sensor to adjust the refresh rate to match the device temperaturethe refresh rate decreases at
lower temperatures to minimize current consumption during standby. Deep power-down (DPD) enables the system
to halt the refresh operation altogether when no vital information is stored in the device. The system configurable
refresh mechanisms are accessed through the RCR.
This CellularRAM device is compliant with the industry-standard CellularRAM 1.5 generation feature set established
by the CellularRAM Workgroup. It includes support for both variable and fixed latency, with 3 output-device drive-
strength settings, additional wrap options, and a device ID register (DIDR).
2. FEATURES
•Supports asynchronous, page, and burst operations
• VCC, VCCQ Voltages:
1.7V1.95V VCC
1.7V1.95V VCCQ
• Random access time: 70ns
• Burst mode READ and WRITE access:
4, 8, 16, or 32 words, or continuous burst
Burst wrap or sequential
Max clock rate: 133 MHz (tCLK = 7.5ns)
• Page mode READ access:
Sixteen-word page size
Interpage READ access: 70ns
Intrapage READ access: 20ns
• Low-power features
On-chip temperature compensated refresh (TCR)
Partial array refresh (PAR)
Deep power-down (DPD) mode
Package: 54 Ball VFBGA
Active current (ICC1) <35mA at 85°C
Standby current 250μA (max) at 85°C
Deep power-down: Typical 10μA
Operating temperature range : -40°C ~ 85°C
Publication Release Date : May 29, 2013
- 1 - Revision : A01-003




Winbond

W967D6HB Datasheet Preview

W967D6HB Datasheet

CellularRAM

No Preview Available !

3. ORDERING INFORMATION
W967D6HB
128Mb Async./Page,Syn./Burst CellularRAM
Part Number VDD/VDDQ I/O Width Type
Others
W967D6HBGX7I 1.8/1.8
x16 PKG CRAM Non-Mux,133MHz, -40°C~85°C
Publication Release Date : May 29, 2013
- 2 - Revision : A01-003


Part Number W967D6HB
Description CellularRAM
Maker Winbond
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