W967D6HB - CellularRAM

Winbond

📥 Download Datasheet

W967D6HB Datasheet Preview — Preview of W967D6HB PDF

Datasheet Details

Part number	W967D6HB
Manufacturer	Winbond
File Size	1.29 MB
Description	CellularRAM
Datasheet	W967D6HB-Winbond.pdf

W967D6HB Product details

Description

128Mb Async./Page,Syn./Burst CellularRAM Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.The device has a DRAM core organized.These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings.To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a transparent self refresh

Features

Supports asynchronous, page, and burst operations.
VCC, VCCQ Voltages: 1.7V.
1.95V VCC 1.7V.
1.95V VCCQ.
Random access time: 70ns.
Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns).
Page mode READ access:.
Sixteen-word page size.
Interpage READ access: 70ns Intrapage READ access: 20ns.
Low-power features On-chip tempe.

📁 W967D6HB Similar Datasheet

Other Datasheets by Winbond

W963A6BBN - 512K WORD x 16-BIT LOW POWER PSEUDO SRAM
W966K6HB - CellularRAM
W968D6DA - CellularRAM

Published: Feb 17, 2016 |