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W967D6HB - CellularRAM

General Description

Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications.

The device has a DRAM core organized.

Key Features

  • Supports asynchronous, page, and burst operations.
  • VCC, VCCQ Voltages: 1.7V.
  • 1.95V VCC 1.7V.
  • 1.95V VCCQ.
  • Random access time: 70ns.
  • Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 133 MHz (tCLK = 7.5ns).
  • Page mode READ access:.
  • Sixteen-word page size.
  • Interpage READ access: 70ns Intrapage READ access: 20ns.
  • Low-power features On-chip tempe.

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Part Number Description Manufacturer

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W963A6BBN 512K WORD x 16-BIT LOW POWER PSEUDO SRAM
W966K6HB CellularRAM
W968D6DA CellularRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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W967D6HB 1. GENERAL DESCRIPTION 128Mb Async./Page,Syn./Burst CellularRAM Winbond CellularRAM™ products are high-speed, CMOS pseudo-static random access memories developed for low-power, portable applications. The device has a DRAM core organized. These devices include an industrystandard burst mode Flash interface that dramatically increases read/write bandwidth compared with other lowpower SRAM or Pseudo SRAM offerings. To operate seamlessly on a burst Flash bus, CellularRAM products incorporate a transparent self refresh mechanism. The hidden refresh requires no additional support from the system memory controller and has no significant impact on device READ/WRITE performance. Two user-accessible control registers define device operation.