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PFP65T360 / PFF65T360
PFP65T360 / PFF65T360
N-Channel Super Junction MOSFET
FEATURES
New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested RoHS
BVDSS = 650 V RDS(on) = 0.30 Ω ID = 11.