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PFI7N80G - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 1.55 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFI7N80G
Manufacturer Wing On
File Size 1.15 MB
Description N-Channel MOSFET
Datasheet download datasheet PFI7N80G Datasheet

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Full PDF Text Transcription

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June 2007 PFI7N80G / PFB7N80G FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 35 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 1.55 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) Green Package PFI7N80G/PFB7N80G 800V N-Channel MOSFET BVDSS = 800 V RDS(on) = 1.9 Ω ID = 7.0 A TO-262(I2-PAK) 1 2 3 1. Gate 2. Drain 3. Source Drain  Gate  ● ◀▲ ● ●  Source TO-263(D2-PAK) 2 1 3 1. Gate 2. Drain 3.
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