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PFP2N65 - N-Channel MOSFET

Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFP2N65
Manufacturer Wing On
File Size 1.21 MB
Description N-Channel MOSFET
Datasheet download datasheet PFP2N65 Datasheet

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Full PDF Text Transcription

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July 2008 PFP2N65 / PFF2N65 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 9.5 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 4.2 Ω (Typ.) @VGS=10V APPLICATION  High current, High speed switching  Suitable for power supplies, adaptors and PFC  SMPS (Switched Mode Power Supplies) PFP2N65/PFF2N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 4.2 Ω ID = 1.8 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.
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