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PFP10N40 - N-Channel MOSFET

Key Features

  •  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 23 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 0.44 Ω (Typ. ) @VGS=10V.

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Datasheet Details

Part number PFP10N40
Manufacturer Wing On
File Size 1.22 MB
Description N-Channel MOSFET
Datasheet download datasheet PFP10N40 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Sep 2008 PFP10N40 / PFF10N40 FEATURES  Originative New Design  100% EAS Test  Rugged Gate Oxide Technology  Extremely Low Intrinsic Capacitances  Remarkable Switching Characteristics  Unequalled Gate Charge : 23 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 0.44 Ω (Typ.) @VGS=10V APPLICATION  Electronic lamp ballasts based on half bridge topology  PFC (Power Factor Correction)  SMPS (Switched Mode Power Supplies) PFP10N40 / PFF10N40 400V N-Channel MOSFET BVDSS = 400 V RDS(on) = 0.55 Ω ID = 10 A TO-220 Drain  Gate  ● ◀▲ ● ●  Source TO-220F 1 2 3 1.Gate 2. Drain 3. Source 12 3 1.Gate 2. Drain 3.